IRF9Z24STRR P-Channel power MOSFET with 60V drain-source voltage and 11A continuous drain current. Surface mount D2PAK package.
Mfr Part #:

IRF9Z24STRR

Available from 1 distributors
Mfr Name: Vishay
Vishay
P-Channel power MOSFET with 60V drain-source voltage and 11A continuous drain current. Surface mount D2PAK package.
✓ Total Stock: 3,500 pcs
$ Price Range: $2.10 - $2.10

IRF9Z24STRR Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,500 pcs
3500 pcs On Request 1 On Request On Request On Request On Request On Request

IRF9Z24STRR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF9Z24STRR Description

Short technical summary and product information.

The IRF9Z24STRR is a P-Channel power MOSFET from Vishay Siliconix, designed for efficient power management and switching applications. It features a drain-source voltage (Vds) of -60 V and a continuous drain current (Id) of -11 A at Tc=25°C, with a maximum pulsed drain current of -44 A.

 

The device offers a maximum drain-source on-resistance (Rds(on)) of 280 mOhm at Vgs=-10V and Id=-6.6A, ensuring low conduction losses. It is fully avalanche rated with a single pulse avalanche energy (Eas) of 240 mJ. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA, and the total gate charge (Qg) is 19 nC at Vgs=10V.

 

Packaged in a surface mount D2PAK (TO-263) case, the IRF9Z24STRR is suitable for high current applications. It operates over a junction temperature range of -55°C to 175°C and can dissipate up to 60W at Tc=25°C. The device is built with advanced process technology for fast switching and ruggedized performance.

IRF9Z24STRR Quick Information

Product Type: Power MOSFET
Series: IRF9Z24S
Canonical Name: Vishay Siliconix IRF9Z24STRR P-Channel Power MOSFET
Subcategory: Single MOSFET

IRF9Z24STRR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: No

IRF9Z24STRR Estimated Pricing

Qty Low High
800+ $2.10 $2.10
1,600+ $2.10 $2.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF9Z24STRR Features

  • P-Channel MOSFET with -60V drain-source voltage.
  • Continuous drain current of -11A at 25°C.
  • Low on-resistance of 280 mOhm at 10V gate drive.
  • Fully avalanche rated with 240 mJ energy capability.
  • Surface mount D2PAK (TO-263) package.

IRF9Z24STRR Applications

  • Used in power management and DC-DC converters.
  • Suitable for high-current load switching circuits.
  • Ideal for automotive and industrial power systems.
  • Applied in battery protection and power distribution.

IRF9Z24STRR FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF9Z24STRR?

The drain-source voltage (Vds) is -60 V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is -11 A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance (Rds(on)) is 280 mOhm at Id=6.6A and Vgs=10V.

What package type is the IRF9Z24STRR available in?

It is available in a surface mount D2PAK (TO-263) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRF9Z24STRR RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and low confidence.

Home
Account

Categories