IRF9Z24NPBF IRF9Z24NPBF is a 55V, 12A P-Channel MOSFET from Infineon Technologies in a TO-220AB package. Max on-resistance is 175mΩ at 10V gate drive.
Mfr Part #:

IRF9Z24NPBF

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF9Z24NPBF is a 55V, 12A P-Channel MOSFET from Infineon Technologies in a TO-220AB package. Max on-resistance is 175mΩ at 10V gate drive.
✓ Total Stock: 32,120 pcs
$ Price Range: $0.45 - $1.78

IRF9Z24NPBF Available from 3 distributors

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✓ Non-Authorised
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31,020 pcs
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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100 pcs
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IRF9Z24NPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF9Z24NPBF Description

Short technical summary and product information.

IRF9Z24NPBF is a P-channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power management applications requiring a through-hole package. The device is rated for a drain-to-source voltage (Vdss) of 55V and a continuous drain current of 12A at case temperature Tc. The maximum on-state resistance is 175mΩ at a gate-to-source voltage of 10V and a drain current of 7.2A.

 

The device has a maximum gate-to-source voltage of ±20V and a gate threshold voltage of 4V at a drain current of 250µA. It can dissipate up to 45W at case temperature Tc. The operating junction temperature range is from -55°C to 175°C. The input capacitance is rated at 350pF at 25V drain-source voltage, and maximum gate charge is 19nC at 10V gate-source voltage.

 

The IRF9Z24NPBF is available in a TO-220AB package which is widely used for power semiconductors. The mounting type is through-hole, making it suitable for power supplies, motor controls, load switching, and other general purpose switching applications. Its P-channel polarity simplifies drive circuitry in high-side switch configurations.

 

The device is reported RoHS compliant and has a moisture sensitivity level of 1 (unlimited), allowing easy handling without strict baking requirements.

IRF9Z24NPBF Quick Information

Product Type: P-Channel MOSFET
Canonical Name: P-Channel MOSFET
Subcategory: Single FET

IRF9Z24NPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF9Z24NPBF Estimated Pricing

Qty Low High
1+ $1.78 $1.78
10+ $1.13 $1.13
100+ $0.76 $0.76
500+ $0.60 $0.60
1,000+ $0.54 $0.54
2,000+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF9Z24NPBF Features

  • P-channel MOSFET with 55V drain-source voltage.
  • 12A continuous drain current at Tc.
  • 175mΩ max on-resistance at Vgs=10V.
  • TO-220AB through-hole package.
  • RoHS compliant, MSL 1 unlimited.

IRF9Z24NPBF Applications

  • Suitable for high-side load switching.
  • Used in power conversion circuits.
  • Ideal for DC motor control.
  • Applicable in battery protection circuits.

IRF9Z24NPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IRF9Z24NPBF?

The IRF9Z24NPBF has a maximum drain-to-source voltage (Vdss) of 55V.

What package is the IRF9Z24NPBF available in?

The device comes in a TO-220-3 through-hole package with supplier device package TO-220AB.

What is the operating temperature range of the IRF9Z24NPBF?

The junction operating temperature range is from -55°C to 175°C.

Is the IRF9Z24NPBF RoHS compliant?

Yes, it is reported as RoHS3 compliant.

What is the continuous drain current rating?

The continuous drain current is rated at 12A at case temperature Tc.

What is the maximum on-resistance of the IRF9Z24NPBF?

The maximum on-resistance is 175mΩ at Vgs=10V and Id=7.2A.

What is the maximum power dissipation?

The maximum power dissipation is 45W at case temperature Tc.

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