| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
776 pcs
|
776 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9Z10PBF is a P-Channel Power MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power management applications. Key specifications include a drain-source voltage (Vdss) of -60V, continuous drain current of 6.7A at 25°C, and a maximum on-resistance of 500 mOhm at Vgs = -10V and Id = 4A. The device features a gate charge of 12 nC and input capacitance of 270 pF, enabling fast switching performance. The MOSFET is housed in a TO-220AB through-hole package, suitable for commercial and industrial applications with power dissipation up to 43W. It operates over a junction temperature range of -55°C to 175°C. The part is RoHS compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.21 | $2.21 |
| 10+ | $1.08 | $1.08 |
| 100+ | $0.87 | $0.87 |
| 500+ | $0.74 | $0.74 |
| 1,000+ | $0.69 | $0.69 |
| 5,000+ | $0.69 | $0.69 |
| 10,000+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is -60V.
It is available in a TO-220-3 through-hole package (TO-220AB).
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant.
6.7A.
500 mOhm maximum at Id = 4A.
Maximum 4V at Id = 250 µA.