| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF9956 is a dual N-channel enhancement-mode power MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It integrates two independent N-channel MOSFETs in a single 8-SOIC surface mount package, making it suitable for space-constrained designs requiring multiple switching elements.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A. The device features logic level gate drive with a maximum gate threshold voltage of 1V at 250µA drain current, allowing direct interfacing with low-voltage logic circuits. The maximum drain-source on-resistance (Rds(on)) is 100mOhm at Vgs = 10V and Id = 2.2A. Gate charge is 14nC maximum at Vgs = 10V, and input capacitance (Ciss) is 190pF typical at Vds = 15V.
The MOSFET operates over a junction temperature range of -55°C to +150°C with a maximum power dissipation of 2W. It is supplied in the industry-standard 8-SOIC package (0.154" width, 3.90mm body width) with a supplier device package designation of 8-SO. The dual configuration provides design flexibility for applications such as synchronous rectification, load switching, and DC-DC converter topologies.
| Qty | Low | High |
|---|---|---|
| 95+ | $1.47 | $1.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 3.5A.
The IRF9956 is supplied in an 8-SOIC surface mount package (0.154" width, 3.90mm body width).
The operating junction temperature range is -55°C to +150°C.
The IRF9956 is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The maximum drain-source on-resistance (Rds(on)) is 100mOhm at Vgs = 10V and Id = 2.2A.
Yes, the IRF9956 features logic level gate drive with a maximum gate threshold voltage of 1V at 250µA drain current.