IRF9952TR The Vishay Dale IRF9952TR is an N and P-Channel MOSFET designed for logic level gate applications. It features a 30V drain-to-source voltage and a continuous drain current of up to 3.5A.
Mfr Part #:

IRF9952TR

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale IRF9952TR is an N and P-Channel MOSFET designed for logic level gate applications. It features a 30V drain-to-source voltage and a continuous drain current of up to 3.5A.
✓ Total Stock: 4,570 pcs
$ Price Range: $1.64

IRF9952TR Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,800 pcs
2800 pcs On Request 1 On Request On Request 04+ On Request On Request
Non-Authorised Inventory information
1,770 pcs
1770 pcs On Request 1 On Request On Request On Request On Request On Request

IRF9952TR Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Storage Temperature
Supplier Device Package
Tape & Reel

IRF9952TR Description

Short technical summary and product information.

The IRF9952TR from Vishay Dale is a versatile N and P-Channel MOSFET belonging to the HEXFET® series. It is designed for logic level gate applications and offers a drain-to-source voltage (Vdss) of 30V. The continuous drain current (Id) is rated at 3.5A for the N-channel and 2.3A for the P-channel at 25°C.

 

This MOSFET exhibits a maximum on-resistance (Rds On) of 100mOhm at 2.2A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. Key electrical parameters include a maximum gate charge (Qg) of 14nC at 10V and a maximum input capacitance (Ciss) of 190pF at 15V. The device has a maximum power dissipation of 2W.

 

Packaged in an 8-SOIC surface mount configuration, the IRF9952TR operates within a temperature range of -55°C to 150°C. Its robust specifications make it suitable for various power management applications where efficient switching and low on-resistance are critical.

IRF9952TR Quick Information

Product Type: MOSFET
Series: HEXFET®
Canonical Name: IRF9952TR N and P-Channel MOSFET
Subcategory: N and P-Channel

IRF9952TR Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF9952TR Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF9952TR Features

  • N and P-Channel MOSFET
  • 30V Drain to Source Voltage
  • 3.5A Continuous Drain Current
  • 100mOhm Maximum On-Resistance
  • 8-SOIC Surface Mount Package

IRF9952TR Applications

  • Suitable for power management
  • Logic level gate applications
  • Efficient switching required
  • Low on-resistance designs

IRF9952TR FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF9952TR?

The drain-source voltage rating is 30V.

What is the continuous drain current for the N-channel MOSFET?

The continuous drain current for the N-channel MOSFET is 3.5A at 25°C.

What is the on-resistance of the MOSFET array?

The maximum on-resistance is 100mOhm at 2.2A and 10V gate drive.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the IRF9952TR come in?

It comes in an 8-SOIC surface mount package (0.154", 3.90mm Width).

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at 250µA drain current.

What is the input capacitance of the device?

The maximum input capacitance is 190pF at 15V drain-source voltage.

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