| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,800 pcs
|
2800 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request | |
|
1,770 pcs
|
1770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
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| Operating Temperature | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel |
The IRF9952TR from Vishay Dale is a versatile N and P-Channel MOSFET belonging to the HEXFET® series. It is designed for logic level gate applications and offers a drain-to-source voltage (Vdss) of 30V. The continuous drain current (Id) is rated at 3.5A for the N-channel and 2.3A for the P-channel at 25°C.
This MOSFET exhibits a maximum on-resistance (Rds On) of 100mOhm at 2.2A and 10V. The gate threshold voltage (Vgs(th)) is a maximum of 1V at 250µA. Key electrical parameters include a maximum gate charge (Qg) of 14nC at 10V and a maximum input capacitance (Ciss) of 190pF at 15V. The device has a maximum power dissipation of 2W.
Packaged in an 8-SOIC surface mount configuration, the IRF9952TR operates within a temperature range of -55°C to 150°C. Its robust specifications make it suitable for various power management applications where efficient switching and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The continuous drain current for the N-channel MOSFET is 3.5A at 25°C.
The maximum on-resistance is 100mOhm at 2.2A and 10V gate drive.
The operating junction temperature range is -55°C to 150°C.
It comes in an 8-SOIC surface mount package (0.154", 3.90mm Width).
The maximum gate threshold voltage is 1V at 250µA drain current.
The maximum input capacitance is 190pF at 15V drain-source voltage.