BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The IRF9952PBF from Vishay Dale is a dual N and P channel MOSFET featuring logic level gate drive. This component is designed for surface mount applications and comes in a SOIC package.
Key electrical specifications include a maximum drain-source voltage (Vds) of 30V. The continuous drain current (Id) is rated at 3.5A for the N-channel and 2.3A for the P-channel, with pulse current capabilities up to 16A (N-channel) and 10A (P-channel). The on-resistance (Rds(on)) is a maximum of 100 mOhm for the N-channel and 250 mOhm for the P-channel, tested at a Vgs of 10V.
This HEXFET power MOSFET operates within a junction temperature range of -55°C to 150°C. It has a maximum power dissipation of 2W. The component is lead-free and designed for efficient switching.
Packaged in a SOIC case, the IRF9952PBF is suitable for various electronic designs requiring complementary MOSFETs in a compact footprint. Its dimensions are 4.05mm width, 5.2mm depth, and 1.75mm height.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 3.5A for the N-channel and 2.3A for the P-channel.
The maximum drain-source voltage is 30V.
The N-channel on-resistance is a maximum of 100 MOhm, and the P-channel on-resistance is a maximum of 250 MOhm, both tested at Vgs = 10 V.
The maximum junction temperature is 150°C.
The IRF9952PBF is available in a SOIC package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
