| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,750 pcs
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5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (Continuous) (@ P-Channel) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF9952PBF from Infineon Technologies is a dual MOSFET array combining N-channel and P-channel MOSFETs in a single 8-SOIC surface-mount package. This compact device is designed for applications requiring complementary switching in a small footprint.
Electrical specifications include a 30V drain-to-source voltage rating, 3.5A continuous drain current for the N-channel and 2.3A for the P-channel. The maximum on-resistance is 100mΩ at 2.2A and 10V gate drive. Gate charge is 14nC at 10V, and input capacitance is 190pF at 15V. The logic-level gate threshold voltage of 1V allows direct drive from low-voltage logic. Power dissipation is rated at 2W.
The device operates over a temperature range of -55°C to 150°C. It is marked as RoHS3 compliant (unverified), with MSL 1 and REACH unaffected. Suitable for battery management, power switching, and general-purpose load control in space-constrained designs.
The drain-to-source voltage (Vdss) is 30V.
It is available in an 8-SOIC surface-mount package (8-SO supplier device package).
The operating temperature range is -55°C to 150°C (junction temperature).
It is listed as RoHS3 compliant, but this status is unverified.
The N-channel MOSFET supports 3.5A continuous, and the P-channel MOSFET supports 2.3A continuous.
The maximum drain-source on-resistance (Rds(on)) is 100mOhm at Id=2.2A and Vgs=10V.
Yes, it has a logic-level gate with a maximum gate threshold voltage of 1V at Id=250µA.