| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channels | |
| Current Rating | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature |
The IRF9640 is a single P-Channel enhancement-mode power MOSFET designed for medium-voltage switching applications. It is manufactured by Infineon Technologies and housed in a TO-220AB through-hole package with three terminals.
Key electrical specifications include a maximum drain-source breakdown voltage of 200V and a maximum continuous drain current of -11A. The device features a maximum on-resistance of 500mΩ and a typical input capacitance of 1.2nF. Switching performance is characterized by a typical rise time of 43ns and a typical fall time of 38ns. The threshold voltage is -4V nominal.
The MOSFET can dissipate up to 125W and operates over a junction temperature range of -55°C to 150°C. The TO-220AB package is suitable for through-hole mounting on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF9640 has a maximum drain-source breakdown voltage of 200V.
The maximum on-resistance (RDS(on)) is 500mΩ.
The maximum continuous drain current is -11A.
The maximum power dissipation is 125W.
The operating junction temperature range is -55°C to 150°C.
The IRF9640 is supplied in a TO-220AB through-hole package.
The nominal threshold voltage is -4V.