| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,620 pcs
|
6620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9630STRLPBF is a P-Channel power MOSFET from Vishay Siliconix, part of the third generation power MOSFET family. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 6.5A at 25°C case temperature. The on-resistance is typically 800mΩ at Vgs=10V and Id=3.9A. This device is designed for fast switching and ruggedness, with repetitive avalanche rating and dynamic dV/dt capability. It is suitable for high current applications due to its low internal connection resistance. The MOSFET is offered in a surface mount D2PAK (TO-263) package, which provides high power dissipation capability up to 74W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C. The part is lead-free and RoHS compliant (unverified). It is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.85 | $3.85 |
| 10+ | $2.52 | $2.52 |
| 100+ | $1.76 | $1.76 |
| 500+ | $1.37 | $1.37 |
| 800+ | $1.37 | $1.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V maximum.
Surface mount D2PAK (TO-263) package.
-55°C to 150°C junction temperature.
The part is listed as RoHS3 compliant but this is unverified. The datasheet confirms lead-free (PbF) status.
800mΩ maximum at Vgs=10V, Id=3.9A.
Total gate charge 29nC at Vgs=10V.
Single pulse avalanche energy 500mJ.