| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9630 is a P-Channel enhancement mode silicon gate power MOSFET designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for other high-power switching devices. It offers a breakdown voltage of -200V and a continuous drain current of -6.5A at 100°C.
Key electrical characteristics include an RDS(on) of 0.800 Ohms and a threshold voltage of 4V. The MOSFET is rated for a maximum power dissipation of 75W and operates within a temperature range of -55°C to 150°C.
This component comes in a TO-220AB package and is suitable for through-hole mounting. Its high input impedance allows it to be operated directly from integrated circuits, simplifying design integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRF9630 is -200V.
The continuous drain current for the IRF9630 is -6.5A at 100°C.
The maximum on-resistance of the IRF9630 is 800mΩ.
The operating temperature range for the IRF9630 is -55°C to 150°C.
The IRF9630 is available in the TO-220AB package.