| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9630 is a P-Channel Power MOSFET from Vishay Siliconix, designed for medium-power switching applications. It features a drain-source voltage rating of -200V and a continuous drain current of -6.5A at 25°C. The device offers a maximum on-resistance of 0.8Ω at Vgs = -10V, ensuring efficient power handling.
This MOSFET supports a gate-source voltage range of ±20V and has a maximum power dissipation of 74W at Tc = 25°C. It includes fast switching characteristics, repetitive avalanche rating, and a dynamic dV/dt rating, making it suitable for rugged industrial environments.
The IRF9630 is available in the industry-standard TO-220AB through-hole package, which provides low thermal resistance and cost-effectiveness for commercial and industrial applications. The device is compliant with the RoHS Directive 2002/95/EC.
The drain-source voltage rating is -200V.
The maximum continuous drain current is -6.5A at Tc = 25°C.
The maximum on-resistance is 0.8Ω at Vgs = -10V and Id = -3.9A.
The IRF9630 is available in a TO-220AB through-hole package.
The operating junction temperature range is -55°C to +150°C.
The datasheet states the device is compliant to RoHS Directive 2002/95/EC.