| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9630 is a P-Channel power MOSFET designed for medium-power switching applications. It features a drain-source voltage (Vds) of 200V and a continuous drain current (Id) of 6.5A at 25°C. The on-resistance (Rds(on)) is 800mOhm maximum at 3.9A and 10V gate drive. Gate charge is 29nC maximum, and input capacitance is 700pF typical at 25V drain-source. The device is housed in a TO-220AB through-hole package with low thermal resistance (1.7°C/W junction-to-case). Operating junction temperature range is -55°C to 150°C. It is RoHS3 compliant. Avalanche energy ratings support robust operation in inductive switching environments.
| Qty | Low | High |
|---|---|---|
| 186+ | $1.61 | $1.61 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
6.5A.
800mOhm maximum at 3.9A and 10V gate drive.
TO-220AB (through-hole).
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant per the datasheet.
29 nC maximum at 10V gate-source voltage.