IRF9540STRLPBF This is a P-Channel MOSFET from Vishay Dale, rated for 100V drain-source voltage and 19A continuous drain current. It features a low on-resistance of 200mOhm and is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

IRF9540STRLPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
This is a P-Channel MOSFET from Vishay Dale, rated for 100V drain-source voltage and 19A continuous drain current. It features a low on-resistance of 200mOhm and is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 2,620 pcs
$ Price Range: $1.45 - $3.97

IRF9540STRLPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,620 pcs
2620 pcs On Request 1 On Request On Request On Request On Request On Request

IRF9540STRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF9540STRLPBF Description

Short technical summary and product information.

The IRF9540STRLPBF is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power management applications requiring a compact surface-mount package. The device is rated for a maximum drain-source voltage of 100V and a continuous drain current of 19A at case temperature (Tc).

 

Key electrical specifications include a maximum on-resistance (Rds(on)) of 200mOhm at Vgs=10V and Id=11A, a typical gate threshold voltage of 4V, and a gate charge of 61nC. The input capacitance is 1400pF at Vds=25V. These parameters make it suitable for switching applications with moderate frequency.

 

The MOSFET is offered in a D2PAK (TO-263) package, which is a surface-mount leaded package with a tab for enhanced thermal dissipation. Maximum power dissipation is 150W at case temperature (Tc) and 3.7W at ambient temperature (Ta). The operating junction temperature range is -55°C to 175°C.

 

The device requires a gate drive voltage of 10V for optimal Rds(on). It is RoHS compliant, though this status is unverified. The tape and reel packaging (RL suffix) supports automated assembly. For detailed characteristics, refer to the manufacturer's documentation.

IRF9540STRLPBF Quick Information

Product Type: MOSFET
Canonical Name: IRF9540STRLPBF P-Channel MOSFET, 100V, 19A, D2PAK
Subcategory: P-Channel MOSFET

IRF9540STRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF9540STRLPBF Estimated Pricing

Qty Low High
1+ $3.97 $3.97
10+ $2.58 $2.58
100+ $1.96 $1.96
500+ $1.64 $1.64
800+ $1.45 $1.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF9540STRLPBF Features

  • P-Channel MOSFET with 100V rating.
  • 19A continuous drain current capability.
  • Low on-resistance of 200 milliohms.
  • Surface-mount D2PAK (TO-263) package.
  • Wide operating temperature range -55°C to 175°C.

IRF9540STRLPBF Applications

  • Used in power management circuits.
  • Ideal for high-side load switching.
  • Suitable for DC-DC converter applications.
  • Applicable in battery protection circuits.

IRF9540STRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What package does the IRF9540STRLPBF come in?

TO-263-3 (D2Pak) surface-mount package.

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRF9540STRLPBF RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum drain current?

19A at Tc.

What is the on-resistance of this MOSFET?

200mOhm maximum at Vgs=10V and Id=11A.

What is the gate threshold voltage?

4V maximum at Id=250µA.

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