| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,718 pcs
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1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9540NSTRRPBF is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the IRF9540NS series. It features a minimum drain-source breakdown voltage of -100V and a maximum on-resistance of 117mΩ at Vgs=-10V and Id=-14A. The continuous drain current is rated at -23A at Tc=25°C and -14A at Tc=100°C, with a pulsed drain current capability of -92A.
Electrical characteristics include a gate threshold voltage range of -2V to -4V, input capacitance of 1450pF, and total gate charge of 110nC. The device is avalanche rated with a single pulse avalanche energy of 84mJ and repetitive avalanche energy of 11mJ. It operates over a junction temperature range of -55°C to 150°C.
The MOSFET is offered in a TO-263-3 (D2PAK) surface mount package, suitable for automated assembly. Maximum power dissipation is 110W at case temperature and 3.1W at ambient. The part is lead-free and RoHS compliant per datasheet claims, though compliance is unverified. Typical applications include power management, load switching, and DC-DC converters.
The minimum drain-source breakdown voltage is -100V at Vgs=0V and Id=-250µA.
The maximum static drain-to-source on-resistance is 117mΩ at Vgs=-10V and Id=-14A.
The continuous drain current is -23A at Tc=25°C and -14A at Tc=100°C with Vgs=-10V.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-263-3 (D2PAK) surface mount package.
The datasheet indicates RoHS3 compliance, but this is unverified.
The gate threshold voltage ranges from -2V to -4V at Vds=Vgs and Id=-250µA.