BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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95 pcs
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95 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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66 pcs
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66 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRF9540NSPBF is a P-Channel Power MOSFET featuring advanced process technology for high efficiency and reliability. It boasts a continuous drain current of -23A at 25°C and -14A at 100°C, with a pulsed drain current capability of -92A.
This MOSFET operates with a gate-to-source voltage of ±20V and a drain-to-source voltage of -60V. Key electrical characteristics include a typical on-resistance of 56mΩ at -10V gate-source voltage and -14A drain current, and a gate threshold voltage of -4V.
Designed for demanding applications, the IRF9540NSPBF offers a 150°C operating junction temperature and a maximum power dissipation of 110W at 25°C case temperature. It supports repetitive avalanche energy up to -13mJ and a peak diode recovery dv/dt of -300V/ns.
The device is available in D2Pak and TO-262 surface mount packages, facilitating integration into various electronic designs. Its features make it suitable for a wide range of power switching and control applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is -23A at 25°C case temperature and -14A at 100°C case temperature.
The drain-to-source voltage is -60V.
The typical on-resistance is 56mΩ when VGS is -10V and ID is -14A.
The operating junction and storage temperature range is -55°C to +150°C.
The IRF9540NSPBF is available in D2Pak and TO-262 package types.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.