| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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IRF9540 is a P-Channel power MOSFET designed for high-speed switching applications. It features a maximum drain-source voltage of 100V and continuous drain current of 19A at 25°C case temperature. The device has a low on-resistance of 200mΩ (max) at 10V gate drive, ensuring efficient power handling.
The MOSFET is built with third-generation technology, offering fast switching, repetitive avalanche capability, and a dynamic dV/dt rating. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 150W at 25°C case temperature.
The IRF9540 is housed in the industry-standard TO-220AB through-hole package, which provides low thermal resistance and ease of mounting. It is suitable for a variety of power management and switching applications, including DC-DC converters, motor drives, and power supplies.
| Qty | Low | High |
|---|---|---|
| 151+ | $1.99 | $1.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum drain-source voltage is 100V.
The IRF9540 is available in TO-220-3 through-hole package.
The junction temperature range is -55°C to 175°C.
The IRF9540 is listed as RoHS3 compliant per supplier data, but this is unverified.
Maximum on-resistance is 200mΩ at 11A and 10V gate drive.
Maximum total gate charge is 61nC at 10V gate-source voltage.
Maximum power dissipation is 150W at 25°C case temperature.