| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale IRF9532 is an advanced P-Channel Power MOSFET from the HEXFET line. It is designed for applications that benefit from reverse polarity convenience, retaining features like voltage control, fast switching, and ease of paralleling. This MOSFET boasts a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 10A, with a maximum power dissipation (Pd) of 75W.
With a low on-resistance (Rds(on)) of 0.4 Ohms and a maximum gate-source voltage (Vgs) of 10V, the IRF9532 is suitable for demanding applications. Its efficient geometry and unique HEXFET processing contribute to high transconductance and device ruggedness. The P-Channel HEXFETs are particularly useful in circuits where N-Channel MOSFETs might require a negative gate drive.
Common applications for the IRF9532 include motor control, audio amplifiers, switched converters, control circuits, and pulse amplifiers. Its compact plastic package and excellent temperature stability make it a reliable choice for various electronic designs. The MOSFET is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the IRF9532 is 100V.
The IRF9532 has a continuous drain current rating of 10A.
The power dissipation for the IRF9532 is 75W.
The on-resistance of the IRF9532 is 0.4 Ohms.
The maximum gate-source voltage for the IRF9532 is 10V.
The IRF9532 is a P-Channel MOSFET.
The IRF9532 is used in motor control, audio amplifiers, switched converters, control circuits, and pulse amplifiers.