| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 828 | On Request | On Request |
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The IRF9530NSTRRPBF is a P-Channel enhancement-mode power MOSFET from Infineon Technologies, part of the fifth-generation HEXFET series. It features a drain-source breakdown voltage of 100V and a continuous drain current rating of 14A at 25°C case temperature. The device offers a maximum on-resistance of 200mOhm at Vgs=10V, ensuring efficient power switching.
This MOSFET is fully avalanche rated with a single pulse avalanche energy of 250mJ and an avalanche current of 8.4A. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. The gate threshold voltage ranges from -2.0V to -4.0V, and the maximum gate-source voltage is ±20V.
The IRF9530NSTRRPBF is supplied in a surface-mount D2PAK (TO-263) package, which provides high power dissipation capability of up to 79W at 25°C case temperature. The device is lead-free and RoHS3 compliant, supporting environmentally conscious design.
The drain-source breakdown voltage is 100V minimum at Vgs=0V and Id=-250µA.
The maximum continuous drain current is 14A at Tc=25°C and 10A at Tc=100°C.
The maximum static drain-source on-resistance is 200mOhm at Id=8.4A and Vgs=10V.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and lead-free as verified by the datasheet.
It comes in a surface-mount D2PAK (TO-263-3) package.