| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
|
8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,593 pcs
|
3593 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
395 pcs
|
395 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9530NSTRLPBF is a P-channel power MOSFET from Infineon Technologies. It is based on International Rectifier's fifth-generation HEXFET technology, which combines low on-resistance with fast switching and rugged device design.
This MOSFET features a drain-source voltage of -100V, continuous drain current of -14A at 25°C, and an on-resistance of 0.20Ω. It can dissipate up to 79W at a case temperature of 25°C and operates within a junction temperature range of -55°C to +175°C.
The device is fully avalanche rated, with a single pulse avalanche energy of 250mJ. It is supplied in a D2PAK (TO-263) surface mount package, which offers low internal connection resistance and supports high current applications. The part is lead-free, suitable for power switching and general purpose applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.18 | $2.18 |
| 10+ | $1.40 | $1.40 |
| 100+ | $0.94 | $0.94 |
| 500+ | $0.68 | $0.68 |
| 800+ | $0.62 | $0.62 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is rated at -100V.
The continuous drain current is -14A at 25°C and -10A at 100°C.
The on-resistance is 0.20Ω maximum.
The operating junction and storage temperature range is -55°C to +175°C.
The device is available in a D2PAK surface mount package.
Maximum power dissipation is 79W at case temperature 25°C, or 3.8W at ambient temperature 25°C.
Yes, the single pulse avalanche energy is 250mJ and the avalanche current is -8.4A.