SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Manufacturer Name | |
| Tape & Reel |
The IRF9530 is a P-Channel Power MOSFET designed for various electronic applications. Manufactured by Texas Instruments, this component features a breakdown voltage of -100V and a minimum breakdown voltage of 100V. Its maximum on-resistance (RDS(on) Max) is 300mΩ, with a typical input capacitance of 860pF.
This MOSFET operates within a wide temperature range, from -55°C to 175°C. It has a maximum power dissipation of 88W and a typical power dissipation of 3.7W. The package type is D2PAK, and it is designed for surface mounting.
Key electrical characteristics include a typical rise time of 52ns and a fall time of 39ns. The IRF9530 is suitable for applications requiring efficient power switching and control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF9530 has a minimum breakdown voltage of 100V and a maximum of -100V (P-Channel).
The maximum on-resistance (RDS(on)) is 0.3 Ohms.
The maximum power dissipation is 88W, with a typical value of 3.7W.
The operating temperature range is -55°C to 175°C.
The IRF9530 is available in a D2PAK surface mount package.
Typical rise time is 52ns and fall time is 39ns.
The input capacitance is 860pF.