| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF9530 is a P-Channel enhancement-mode power MOSFET designed for high-efficiency switching and linear applications. It features a maximum drain-source voltage of -100V and a continuous drain current rating of -12A at 25°C case temperature. The device has a typical on-resistance of 300 mΩ with a 10V gate drive, minimizing conduction losses.
Designed with fast switching characteristics, the IRF9530 exhibits low gate charge (38 nC typical) and input capacitance of 500 pF, reducing driver requirements. The rugged design includes avalanche energy capability of 400 mJ single pulse, making it suitable for inductive load switching. The maximum operating junction temperature is 175°C.
Packaged in the industry-standard TO-220AB through-hole package, this MOSFET offers excellent thermal performance with power dissipation up to 88W at 25°C case temperature. The TO-220AB package is widely used in commercial and industrial power systems for its low thermal resistance and ease of mounting. This device is suitable for motor control, power supply, and power management circuits requiring P-Channel switching.
| Qty | Low | High |
|---|---|---|
| 151+ | $1.99 | $1.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -100V (P-Channel).
The maximum continuous drain current is -12A at Tcase=25°C, derated to -8.2A at Tcase=100°C.
The maximum on-resistance is 300 mΩ at Vgs=-10V, Id=-6.5A.
The maximum operating junction temperature is 175°C.
It is available in a TO-220-3 through-hole package (TO-220AB).
RoHS compliance is unverified; the datasheet mentions both RoHS-compliant and non-RoHS options. Verify specific part variant with manufacturer.