IRF9530 P-Channel power MOSFET with -100V drain-source voltage and 12A continuous drain current. Features 300 mΩ on-resistance at 10V gate drive.
Mfr Part #:

IRF9530

Available from 1 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
P-Channel power MOSFET with -100V drain-source voltage and 12A continuous drain current. Features 300 mΩ on-resistance at 10V gate drive.
✓ Total Stock: 30 pcs
$ Price Range: $1.99

IRF9530 Available from 1 distributor

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✓ Non-Authorised
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IRF9530 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF9530 Description

Short technical summary and product information.

The IRF9530 is a P-Channel enhancement-mode power MOSFET designed for high-efficiency switching and linear applications. It features a maximum drain-source voltage of -100V and a continuous drain current rating of -12A at 25°C case temperature. The device has a typical on-resistance of 300 mΩ with a 10V gate drive, minimizing conduction losses.

 

Designed with fast switching characteristics, the IRF9530 exhibits low gate charge (38 nC typical) and input capacitance of 500 pF, reducing driver requirements. The rugged design includes avalanche energy capability of 400 mJ single pulse, making it suitable for inductive load switching. The maximum operating junction temperature is 175°C.

 

Packaged in the industry-standard TO-220AB through-hole package, this MOSFET offers excellent thermal performance with power dissipation up to 88W at 25°C case temperature. The TO-220AB package is widely used in commercial and industrial power systems for its low thermal resistance and ease of mounting. This device is suitable for motor control, power supply, and power management circuits requiring P-Channel switching.

IRF9530 Quick Information

Product Type: MOSFET
Canonical Name: IRF9530 Harris Semiconductor P-Channel Power MOSFET
Subcategory: Single MOSFET

IRF9530 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant

IRF9530 Estimated Pricing

Qty Low High
151+ $1.99 $1.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF9530 Features

  • P-Channel MOSFET with -100V drain-source voltage.
  • Low on-resistance of 300 mΩ at 10V gate drive.
  • Fast switching with 38 nC typical gate charge.
  • Avalanche rated with 400 mJ single pulse energy.
  • TO-220AB through-hole package for easy mounting.

IRF9530 Applications

  • Used in high-side load switching circuits.
  • Suitable for motor control and bridge topologies.
  • Ideal for power supply output switching.
  • Used in DC-DC converter and inverter circuits.

IRF9530 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF9530?

The maximum drain-source voltage is -100V (P-Channel).

What is the maximum continuous drain current?

The maximum continuous drain current is -12A at Tcase=25°C, derated to -8.2A at Tcase=100°C.

What is the on-resistance of the IRF9530?

The maximum on-resistance is 300 mΩ at Vgs=-10V, Id=-6.5A.

What is the operating junction temperature range?

The maximum operating junction temperature is 175°C.

What package type is the IRF9530 available in?

It is available in a TO-220-3 through-hole package (TO-220AB).

Is the IRF9530 RoHS compliant?

RoHS compliance is unverified; the datasheet mentions both RoHS-compliant and non-RoHS options. Verify specific part variant with manufacturer.

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