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11 pcs
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11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9511 from Vishay Dale is a P-Channel Power MOSFET designed for various electronic applications. This component offers a maximum Drain-Source Voltage of 80V and a typical Drain-Source Resistance of 1.2Ω. It has a maximum power dissipation rating of 20W and can operate at temperatures up to 150°C.
The MOSFET is housed in a TO-220AB package, which is a common through-hole mounting style. The component has 3 terminals, facilitating its integration into circuit designs. Its specifications make it suitable for switching and amplification tasks in power electronics.
This P-Channel MOSFET is part of a broader family of discrete semiconductor products. Its characteristics are important for engineers selecting components for power management and signal control circuits. The TO-220AB package is known for its thermal performance and ease of assembly on printed circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the IRF9511 is 80V.
The typical Drain-Source Resistance of the IRF9511 is 1.2Ω.
The maximum power dissipation for the IRF9511 is 20W.
The maximum operating temperature for the IRF9511 is 150°C.
The IRF9511 MOSFET is in a TO-220AB package.
The RoHS status of the IRF9511 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IRF9511 is 1 Unlimited.