| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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129 pcs
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129 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9511 is a P-Channel power MOSFET manufactured by Harris Semiconductor. It is designed as a discrete semiconductor component for switching and amplification applications, housed in a TO-220-3 through-hole package. The device is rated for a maximum drain-source voltage of 80V and a continuous drain current of 3A at case temperature (Tc).
Key electrical specifications include a maximum drain-source on-state resistance of 1.2Ω at a drain current of 1.5A and 10V gate drive. The MOSFET offers an input capacitance of 180pF at 25V and a gate charge of 11nC at 10V, which are relevant for estimating switching losses and gate drive requirements. Maximum power dissipation is 20W at case temperature, and the operating junction temperature range is -55°C to 150°C.
The device uses metal-oxide (MOSFET) technology and requires a gate threshold voltage of up to 4V at 250µA. The maximum gate-source voltage is ±20V. With a 10V recommended drive voltage for lowest on-resistance, it suits designs with available 10V gate supplies.
Packaged in a TO-220AB (TO-220-3) leaded format, the IRF9511 is mounted through-hole, making it suitable for prototyping and power boards where thermal management can be provided by a heatsink. Whether used in load switching, power conversion, or other P-Channel switching circuits, this component provides an 80V, 3A capability with a robust package.
The maximum drain-source voltage is 80V.
It is available in a TO-220-3 (TO-220AB) through-hole package.
The junction temperature range is -55°C to 150°C.
The database lists it as RoHS3 compliant, though this is unverified.
The continuous drain current is 3A at case temperature (Tc).
The maximum on-state resistance is 1.2Ω at a drain current of 1.5A and 10V gate drive.
The maximum power dissipation is 20W at case temperature (Tc).