| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,100 pcs
|
4100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9393TRPBF is a P-Channel power MOSFET using HEXFET technology from Infineon Technologies. It is rated for a drain-to-source voltage of 30V (Vdss) and a maximum gate-to-source voltage of ±25V. At 25°C, it supports a continuous drain current of 9.2A, with pulsed drain current capability up to 75A. The device features a low typical drain-to-source on-resistance of 13.3mΩ at VGS=-20V and a maximum of 19.4mΩ at VGS=-10V, making it suitable for high-efficiency power switching applications.
The MOSFET is offered in an industry-standard 8-SOIC surface-mount package, enabling multi-vendor compatibility and easy integration into existing board designs. It supports gate drive voltages of 10V and 20V, providing flexibility in driver circuits. Key electrical characteristics include a total gate charge of 38nC at VGS=10V and input capacitance of 1110pF at VDS=25V, allowing for fast switching performance.
According to the manufacturer, the IRF9393TRPBF is designed for use as an adaptor input switch in notebook PCs. With a maximum power dissipation of 2.5W at 25°C and an operating junction temperature range of -55°C to +150°C, this MOSFET suits a variety of portable and battery-powered applications. The device is RoHS compliant, containing no lead, bromide, or halogen.
The drain-to-source voltage (Vdss) is 30V, with a breakdown voltage of -30V minimum.
Available in an 8-SOIC surface-mount package (8-SO).
Operating junction temperature range is -55°C to +150°C.
Yes, it is RoHS compliant and contains no lead, bromide, or halogen.
9.2A at 25°C ambient; 7.3A at 70°C ambient.
Maximum RDS(on) is 19.4mΩ at VGS=-10V and 32.5mΩ at VGS=-4.5V. Typical is 13.3mΩ at VGS=-20V.
2.5W at TA=25°C and 1.6W at TA=70°C.