| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,399 pcs
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3399 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF9389TRPBF from Vishay Dale is a HEXFET® Power MOSFET featuring both N-channel and P-channel transistors in a single SO-8 package. This configuration increases power density and simplifies drive circuitry for high-side applications.
Key electrical specifications include a Drain-to-Source Voltage of 30V for the N-channel and -30V for the P-channel. The continuous drain current is rated at 6.8A (N-channel) and -4.6A (P-channel) at 25°C. The maximum on-state resistance is 27mΩ for the N-channel and 64mΩ for the P-channel.
This MOSFET operates within a temperature range of -55°C to +150°C. It is designed for surface mount (SMD) applications and comes in a standard tape and reel package of 4000 units. The device is RoHS3 compliant and has an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-to-Source Voltage is 30V for the N-channel and -30V for the P-channel.
The maximum continuous drain current at 25°C is 6.8A for the N-channel and -4.6A for the P-channel.
The package type is SO-8.
The operating junction and storage temperature range is -55°C to +150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.