| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF9358TRPBF is a dual P-Channel enhancement mode MOSFET from Infineon Technologies, housed in a standard SO-8 surface mount package. It is designed for applications requiring high efficiency and compact layout, such as battery charge/discharge switches in notebook PCs.
Key electrical specifications include a maximum drain-source voltage of -30V and a continuous drain current of -9.2A at 25°C. The device features a low typical on-resistance of 16.3mΩ at Vgs = -10V and 23.8mΩ at Vgs = -4.5V, enabling logic-level gate drive. Gate charge is typically 38nC at Vgs = -10V, and input capacitance is 1740pF.
The MOSFET operates over a junction temperature range of -55°C to 150°C and is rated for a maximum power dissipation of 2.0W at 25°C. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The standard packaging is tape and reel with 4000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.59 | $1.59 |
| 4,000+ | $0.41 | $0.41 |
| 8,000+ | $0.38 | $0.38 |
| 12,000+ | $0.38 | $0.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant per datasheet.
38 nC at Vgs = -10V (typical).
-9.2A at TA = 25°C, -7.3A at TA = 70°C.
23.8 mΩ maximum at Vgs = -4.5V, Id = -7.3A.