| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16,000 pcs
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16000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9335TRPBF is a P-Channel enhancement-mode MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It is designed for high-efficiency power management applications, featuring a drain-source voltage rating of -30V and a continuous drain current of -5.4A at 25°C ambient temperature.
The device offers a maximum on-resistance of 59mΩ at a gate-source voltage of -10V, and 110mΩ at -4.5V, enabling flexible gate drive design. The total gate charge is typically 9.1nC, contributing to low switching losses. The input capacitance is 386pF maximum at -25V drain-source voltage.
The MOSFET is housed in an industry-standard 8-SOIC (SO-8) surface-mount package, suitable for automated assembly. It supports an operating junction temperature range of -55°C to 150°C, with a maximum power dissipation of 2.5W at 25°C.
Typical applications include load switching, power management in portable devices, and DC-DC converters. The device is RoHS compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 872+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -30V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant and lead-free.
The maximum on-resistance is 59mΩ at Vgs=-10V, Id=-5.4A, and 110mΩ at Vgs=-4.5V, Id=-4.3A.
The gate threshold voltage ranges from -1.3V (minimum) to -2.4V (maximum) at Id=-10µA.
The typical total gate charge is 9.1nC at Vgs=-10V, Vds=-15V, Id=-4.3A.