| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9333PBF is a P-Channel enhancement mode MOSFET using Infineon's HEXFET technology. It is designed for high efficiency power management and load switching applications.
Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current up to 9.2A at 25°C, and pulsed drain current up to 75A. The device offers low on-resistance: 19.4mΩ maximum at Vgs=-10V and 32.5mΩ maximum at Vgs=-4.5V. Gate threshold voltage ranges from -1.3V to -2.4V, and typical gate charge is 25nC at Vgs=-10V.
The IRF9333PBF is supplied in a standard SO-8 surface mount package (8-SOIC, 0.154" width). It operates over a junction temperature range of -55°C to 150°C, with maximum power dissipation of 2.5W at 25°C ambient. The part is RoHS3 compliant, lead-free, and halogen-free.
| Qty | Low | High |
|---|---|---|
| 3,800+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant, lead-free and halogen-free.
-9.2A.
15.6 mΩ at Vgs=-10V, 25.6 mΩ at Vgs=-4.5V.
Minimum -1.3V, typical -1.8V, maximum -2.4V.