| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,358 pcs
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6358 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9317PBF is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It is designed for high-efficiency power management applications.
Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 16A at 25°C ambient. The device features a low typical on-resistance of 5.4 mOhm at Vgs=10V and 8.3 mOhm at Vgs=4.5V, enabling low conduction losses. Gate charge is 61 nC typical at Vgs=10V, and input capacitance is 2820 pF typical at Vds=15V.
The MOSFET is housed in an industry-standard SO-8 surface mount package (8-SOIC, 3.90mm width) with gull wing leads. It supports a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and halogen free, making it suitable for environmentally sensitive designs.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant.
61 nC typical at Vgs=10V.
5.4 mOhm typical at Vgs=10V, Id=16A.
16A at 25°C ambient.