| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF9310PBF is a P-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power management applications requiring a negative voltage rail. The device offers a drain-to-source voltage (Vdss) of -30V and a continuous drain current (Id) of -20A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 4.6mOhm at Vgs = 10V and Id = 20A, with a typical value of 3.9mOhm. At lower gate drive of 4.5V, the maximum on-resistance is 6.8mOhm. The gate threshold voltage ranges from 1.3V to 2.4V. Total gate charge is 165nC maximum at Vgs = 10V, and input capacitance is 5250pF at Vds = 15V.
The device is housed in an industry-standard 8-SOIC (SO-8) surface-mount package, enabling compatibility with existing PCB layouts. It supports an operating junction temperature range of -55°C to 150°C. The IRF9310PBF is RoHS compliant and contains no lead, bromide, or halogen.
The maximum drain-to-source voltage (Vdss) is -30V.
The continuous drain current (Id) is -20A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 4.6mOhm at Vgs = 10V and Id = 20A.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states it is RoHS compliant and contains no lead, bromide, or halogen.
The gate threshold voltage (Vgs(th)) ranges from 1.3V minimum to 2.4V maximum at Id = 100µA.