| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF8915PBF is a dual N-Channel logic level gate MOSFET from Infineon Technologies, part of the HEXFET power MOSFET family. It is designed for surface mount applications and housed in an 8-SOIC package (8-SO).
Key electrical specifications include a drain-source voltage (Vdss) of 20V, a continuous drain current of 8.9A, and a maximum on-resistance of 18.3mΩ at Vgs=10V and Id=8.9A. The device features a logic level gate, enabling full enhancement at lower gate voltages. Maximum gate charge is 7.4nC at Vgs=4.5V, and maximum input capacitance is 540pF at Vds=10V. The maximum gate threshold voltage is 2.5V at Id=250µA.
The device is rated for a power dissipation of 2W and operates over a junction temperature range of -55°C to 150°C. The dual N-Channel configuration integrates two MOSFETs in a single package, saving board space and simplifying layout.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current is 8.9A.
The maximum on-resistance is 18.3mΩ at Vgs=10V and Id=8.9A.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also known as 8-SO.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this is unverified.
The maximum gate threshold voltage is 2.5V at Id=250µA.