IRF8910TRPBF The Infineon IRF8910TRPBF is a dual N-Channel MOSFET array with a 20V drain-source voltage and 10A continuous drain current. It features a logic level gate and is available in a surface mount 8-SO package.
Mfr Part #:

IRF8910TRPBF

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IRF8910TRPBF is a dual N-Channel MOSFET array with a 20V drain-source voltage and 10A continuous drain current. It features a logic level gate and is available in a surface mount 8-SO package.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.99

IRF8910TRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF8910TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Gate Charge
Mounting Type
Tape & Reel
Technology

IRF8910TRPBF Description

Short technical summary and product information.

The Infineon IRF8910TRPBF is a HEXFET® MOSFET array designed for various electronic applications. This component features a 20V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 10A at 25°C. Its on-resistance (Rds On) is a maximum of 13.4mOhm at 10A and 10V gate-source voltage.

 

The MOSFET array operates with a logic level gate and has a gate threshold voltage (Vgs(th)) of 2.55V maximum at 250µA. The gate charge (Qg) is a maximum of 11nC at 10V gate-source voltage. The technology used is MOSFET (Metal Oxide), and it is configured as two N-Channel FETs.

 

This component is packaged in an 8-SO surface mount package, supplied in Cut Tape (CT) & Digi-Reel® format. Its compact size and surface mount capability make it suitable for integration into various circuit designs where space is a consideration.

 

The IRF8910TRPBF is specified with RoHS3 compliance and an MSL rating of 1 Unlimited, indicating its suitability for a wide range of manufacturing environments.

IRF8910TRPBF Quick Information

Product Type: MOSFET Array
Series: HEXFET®
Canonical Name: Infineon IRF8910TRPBF Dual N-Channel MOSFET
Subcategory: FETs, MOSFETs

IRF8910TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF8910TRPBF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF8910TRPBF Features

  • 20V drain-source voltage capability.
  • 10A continuous drain current rating.
  • Low 13.4mOhm maximum on-resistance.
  • Logic level gate for flexibility.
  • Dual N-Channel MOSFET configuration.

IRF8910TRPBF Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in battery management systems.
  • Applicable in load switch designs.

IRF8910TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V.

What is the continuous drain current?

10A at 25°C.

What is the on-resistance?

13.4mOhm at 10A, 10V.

What is the gate threshold voltage?

2.55V at 250µA.

What is the gate charge?

11nC at 10V.

What is the package type?

8-SO surface mount.

What is the configuration?

2 N-Channel (Dual) FET.

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