| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Gate Charge | |
| Mounting Type | |
| Tape & Reel | |
| Technology |
The Infineon IRF8910TRPBF is a HEXFET® MOSFET array designed for various electronic applications. This component features a 20V drain-to-source voltage (Vdss) and can handle a continuous drain current (Id) of up to 10A at 25°C. Its on-resistance (Rds On) is a maximum of 13.4mOhm at 10A and 10V gate-source voltage.
The MOSFET array operates with a logic level gate and has a gate threshold voltage (Vgs(th)) of 2.55V maximum at 250µA. The gate charge (Qg) is a maximum of 11nC at 10V gate-source voltage. The technology used is MOSFET (Metal Oxide), and it is configured as two N-Channel FETs.
This component is packaged in an 8-SO surface mount package, supplied in Cut Tape (CT) & Digi-Reel® format. Its compact size and surface mount capability make it suitable for integration into various circuit designs where space is a consideration.
The IRF8910TRPBF is specified with RoHS3 compliance and an MSL rating of 1 Unlimited, indicating its suitability for a wide range of manufacturing environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
10A at 25°C.
13.4mOhm at 10A, 10V.
2.55V at 250µA.
11nC at 10V.
8-SO surface mount.
2 N-Channel (Dual) FET.