IRF8852TRPBF The Infineon Technologies IRF8852TRPBF is a dual N-channel MOSFET with a 25V drain-source voltage rating and a continuous drain current of 7.8A. It features a logic level gate and is housed in an 8-TSSOP package.
Mfr Part #:

IRF8852TRPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Infineon Technologies IRF8852TRPBF is a dual N-channel MOSFET with a 25V drain-source voltage rating and a continuous drain current of 7.8A. It features a logic level gate and is housed in an 8-TSSOP package.
Total Stock: 8 pcs
$ Price Range: $2.93

IRF8852TRPBF Available from 1 distributor

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Non-Authorised
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8 pcs
8 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

IRF8852TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current
Drain-to-Source Voltage
FET Feature
FET Type
Failure Rate
Gate Charge
Gate Threshold Voltage
Input Capacitance
Mounting Type
On-Resistance
Operating Temperature
Power Dissipation
Supplier Device Package

IRF8852TRPBF Description

Short technical summary and product information.

The Infineon Technologies IRF8852TRPBF is a dual N-channel MOSFET designed for various electronic applications. It offers a maximum drain-to-source voltage (Vdss) of 25V and can handle a continuous drain current (Id) of 7.8A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 11.3 mOhm at 7.8A and 10V.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.35V at 25µA, a maximum gate charge (Qg) of 9.5nC at 4.5V, and an input capacitance (Ciss) of 1151pF at 20V. The device has a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C.

 

This MOSFET is suitable for surface mount applications and comes in an 8-TSSOP package. Its logic level gate feature makes it versatile for different control voltage requirements.

IRF8852TRPBF Quick Information

Product Type: MOSFET
Series: HEXFET?
Canonical Name: Infineon Technologies IRF8852TRPBF Dual N-Channel Logic Level Gate MOSFET
Subcategory: Dual N-Channel

IRF8852TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRF8852TRPBF Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF8852TRPBF Features

  • Dual N-channel MOSFET design
  • 25V Drain-Source Voltage rating
  • 7.8A Continuous Drain Current
  • Logic Level Gate feature
  • 8-TSSOP surface mount package

IRF8852TRPBF Applications

  • Ideal for DC-DC converter synchronous rectifier stages.
  • Used in automotive battery management system switches.
  • Suitable for motor driver half-bridge configurations.
  • Applied in portable electronics power distribution networks.
  • Designed for industrial control board load switching.

IRF8852TRPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain to Source Voltage for the IRF8852TRPBF?

The maximum Drain to Source Voltage (Vdss) for the IRF8852TRPBF is 25V.

What is the continuous drain current of the IRF8852TRPBF at 25°C?

The continuous drain current (Id) for the IRF8852TRPBF at 25°C is 7.8A.

What is the maximum On-Resistance of the IRF8852TRPBF?

The maximum On-Resistance (Rds On) for the IRF8852TRPBF is 11.3 mOhm when measured at 7.8A and 10V.

What is the operating temperature range for the IRF8852TRPBF?

The IRF8852TRPBF operates within a temperature range of -55°C to 150°C.

What type of FET is the IRF8852TRPBF?

The IRF8852TRPBF is a dual N-channel FET with a logic level gate feature.

What package is the IRF8852TRPBF supplied in?

The IRF8852TRPBF is supplied in an 8-TSSOP package and is designed for surface mounting.

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