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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8 pcs
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8 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current | |
| Drain-to-Source Voltage | |
| FET Feature | |
| FET Type | |
| Failure Rate | |
| Gate Charge | |
| Gate Threshold Voltage | |
| Input Capacitance | |
| Mounting Type | |
| On-Resistance | |
| Operating Temperature | |
| Power Dissipation | |
| Supplier Device Package |
The Infineon Technologies IRF8852TRPBF is a dual N-channel MOSFET designed for various electronic applications. It offers a maximum drain-to-source voltage (Vdss) of 25V and can handle a continuous drain current (Id) of 7.8A at 25°C. The MOSFET exhibits a low on-resistance (Rds On) of 11.3 mOhm at 7.8A and 10V.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.35V at 25µA, a maximum gate charge (Qg) of 9.5nC at 4.5V, and an input capacitance (Ciss) of 1151pF at 20V. The device has a maximum power dissipation of 1W and operates within a temperature range of -55°C to 150°C.
This MOSFET is suitable for surface mount applications and comes in an 8-TSSOP package. Its logic level gate feature makes it versatile for different control voltage requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage (Vdss) for the IRF8852TRPBF is 25V.
The continuous drain current (Id) for the IRF8852TRPBF at 25°C is 7.8A.
The maximum On-Resistance (Rds On) for the IRF8852TRPBF is 11.3 mOhm when measured at 7.8A and 10V.
The IRF8852TRPBF operates within a temperature range of -55°C to 150°C.
The IRF8852TRPBF is a dual N-channel FET with a logic level gate feature.
The IRF8852TRPBF is supplied in an 8-TSSOP package and is designed for surface mounting.