| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
41,020 pcs
|
41020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF8788TRPBF from Infineon Technologies is an N-channel enhancement mode power MOSFET built with HEXFET technology. It is designed for low-voltage synchronous buck converter applications in notebook and isolated DC-DC converters.
Key electrical specifications include a maximum drain-to-source voltage of 30V, a continuous drain current of 24A at 25°C ambient, and a typical on-resistance of 2.3mΩ with 10V gate drive. The device features low gate charge of 44 nC typical and fast switching characteristics.
The MOSFET is housed in a standard 8-SOIC surface mount package with a junction-to-ambient thermal resistance of 50°C/W. It is lead-free and RoHS compliant. This part is suitable for high efficiency power conversion where low conduction and switching losses are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.91 | $1.91 |
| 10+ | $1.22 | $1.22 |
| 50+ | $0.91 | $0.91 |
| 100+ | $0.82 | $0.82 |
| 500+ | $0.64 | $0.64 |
| 4,000+ | $0.50 | $0.50 |
| 12,000+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 24A at 25°C ambient.
Typical Rds(on) is 2.3 mΩ at Vgs=10V and Id=24A.
The device is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount package with supplier device package designation 8-SO.
The junction operating temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant and is also lead-free (PbF) as verified by the datasheet.