IRF8734TRPBF N-Channel MOSFET with 30V drain-source voltage and 21A continuous drain current. Features low on-resistance of 3.5mΩ at 10V gate drive.
Mfr Part #:

IRF8734TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 30V drain-source voltage and 21A continuous drain current. Features low on-resistance of 3.5mΩ at 10V gate drive.
✓ Total Stock: 5,020 pcs
$ Price Range: $0.46 - $1.96

IRF8734TRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,020 pcs
5020 pcs On Request 1 On Request On Request On Request On Request On Request

IRF8734TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRF8734TRPBF Description

Short technical summary and product information.

The IRF8734TRPBF is an N-Channel power MOSFET from Infineon Technologies' HEXFET family, specifically designed for synchronous rectification applications. It is ideal for use as a synchronous MOSFET in notebook processor power supplies and as a synchronous rectifier in isolated DC-DC converters for networking systems. With a drain-source voltage rating of 30V and a continuous drain current of 21A at 25°C, this device offers low conduction losses and high efficiency.

 

Key electrical specifications include a maximum on-resistance of 3.5mΩ at Vgs=10V and Id=21A, and 4.5mΩ at Vgs=4.5V and Id=17A. The gate threshold voltage is 2.35V maximum. The device features low gate charge (20nC typical at 4.5V) and fast switching characteristics with typical turn-on delay of 13ns and rise time of 16ns. It is fully characterized for avalanche energy and current, and 100% tested for Rds(on).

 

The MOSFET is packaged in an industry-standard SO-8 (8-SOIC, 3.90mm width) surface mount package with gull wing leads. It is lead-free and RoHS compliant. The operating junction temperature range is -55°C to 150°C, making it suitable for a wide range of environments.

IRF8734TRPBF Quick Information

Product Type: Single MOSFET
Series: HEXFET
Canonical Name: IRF8734TRPBF N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRF8734TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF8734TRPBF Estimated Pricing

Qty Low High
1+ $1.96 $1.96
10+ $1.24 $1.24
50+ $0.93 $0.93
100+ $0.83 $0.83
500+ $0.66 $0.66
4,000+ $0.51 $0.51
12,000+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF8734TRPBF Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Low on-resistance of 3.5mΩ at 10V gate drive.
  • 21A continuous drain current at 25°C ambient.
  • Low gate charge of 20nC typical at 4.5V.
  • Surface mount SO-8 package for compact designs.

IRF8734TRPBF Applications

  • Synchronous MOSFET for notebook processor power.
  • Synchronous rectifier in isolated DC-DC converters.
  • Used in networking system power supplies.

IRF8734TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V

What is the continuous drain current?

21A at 25°C ambient

What is the on-resistance?

3.5mΩ maximum at Vgs=10V, Id=21A

What package is this MOSFET available in?

8-SOIC (0.154", 3.90mm Width) surface mount package

What is the operating temperature range?

-55°C to 150°C junction temperature

Is this device RoHS compliant?

Yes, RoHS3 compliant (unverified)

What is the gate threshold voltage?

2.35V maximum at Id=50µA

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