| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 15+31 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF8714TRPBF is an N-Channel power MOSFET from Infineon Technologies, built with HEXFET silicon technology. It is supplied in an industry-standard SO-8 (8-SOIC) surface-mount package and designed for space-constrained power conversion applications.
This device is rated for a maximum drain-to-source voltage of 30V and a continuous drain current of 14A at 25°C, or 11A at 70°C, with VGS at 10V. The static drain-to-source on-resistance is typically 7.1mΩ and maximum 8.7mΩ at VGS=10V and ID=14A; at 4.5V gate drive, it is typically 10.9mΩ and maximum 13mΩ. The total gate charge is 8.1nC typical (12nC max) at VGS=4.5V, which helps minimize switching losses.
The IRF8714TRPBF is optimized for use as a control MOSFET in synchronous buck converters for notebook processor power, as well as for isolated DC-DC converters in networking systems. It also features ultra-low gate impedance and is fully characterized for avalanche voltage and current. The operating junction temperature range is -55°C to +150°C.
The device is lead-free and RoHS-compliant, and is supplied in a surface-mount SO-8 package suitable for automated assembly. Mounting type is surface mount.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 14A at 25°C and 11A at 70°C, with VGS at 10V.
The maximum on-resistance is 8.7mΩ at VGS=10V, ID=14A, and 13mΩ at VGS=4.5V, ID=11A.
Total gate charge is typically 8.1nC (max 12nC) at VGS=4.5V.
The operating junction temperature range is -55°C to +150°C.
The device is available in an 8-SOIC (8-SO) surface-mount package.
The part is marked RoHS3 compliant and lead-free (PbF) per the datasheet.