IRF8714GTRPBF N-Channel MOSFET with 30V drain-source voltage and 14A continuous drain current. Features low on-resistance of 8.7mΩ at 10V gate drive.
Mfr Part #:

IRF8714GTRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 30V drain-source voltage and 14A continuous drain current. Features low on-resistance of 8.7mΩ at 10V gate drive.
✓ Total Stock: 3,985 pcs

IRF8714GTRPBF Available from 1 distributor

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IRF8714GTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF8714GTRPBF Description

Short technical summary and product information.

The IRF8714GTRPBF is an N-Channel Power MOSFET from Infineon Technologies, designed for high-efficiency DC-DC conversion applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 14A at 25°C ambient. The device offers a low on-resistance of 8.7mΩ maximum at 10V gate drive, minimizing conduction losses.

 

With a typical gate charge of 8.1nC and input capacitance of 1020pF, this MOSFET is optimized for fast switching in synchronous buck converters and isolated DC-DC converters used in notebook processors and networking systems. The device is fully characterized for avalanche voltage and current, and includes 100% testing for gate resistance.

 

Packaged in a standard 8-SOIC surface mount package, the IRF8714GTRPBF is lead-free and halogen-free, supporting environmental compliance requirements. The operating junction temperature range is -55°C to 150°C, with a maximum junction-to-ambient thermal resistance of 50°C/W.

IRF8714GTRPBF Quick Information

Product Type: MOSFET (Metal Oxide)
Series: HEXFET
Canonical Name: IRF8714GTRPBF - N-Channel MOSFET, 30V, 14A, 8-SOIC
Subcategory: Single MOSFET

IRF8714GTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF8714GTRPBF Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current rated at 14A.
  • Low on-resistance of 8.7mΩ at 10V gate drive.
  • Ultra-low gate charge of 8.1nC typical.
  • Surface mount 8-SOIC package.

IRF8714GTRPBF Applications

  • Control MOSFET for synchronous buck converters.
  • Used in isolated DC-DC converters for networking.
  • Ideal for notebook processor power regulation.

IRF8714GTRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What is the continuous drain current?

14A at 25°C ambient.

What is the on-resistance?

8.7mΩ maximum at 10V gate drive and 14A drain current.

What is the gate threshold voltage?

2.35V maximum at 25µA drain current.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is this MOSFET available in?

8-SOIC (0.154", 3.90mm Width) surface mount package.

Is this component RoHS compliant?

RoHS3 Compliant (unverified).

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