| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRF8714GPBF is a HEXFET power MOSFET from Infineon Technologies (formerly International Rectifier). It is an N-channel enhancement mode MOSFET designed for synchronous buck converters and isolated DC-DC converters.
Key specifications include a drain-source voltage (Vdss) of 30V, continuous drain current of 14A at 25°C, and a maximum Rds(on) of 8.7mOhm at Vgs=10V. The gate charge is typically 8.1nC, enabling fast switching. It is fully characterized for avalanche voltage and current.
Primary applications include control MOSFET in synchronous buck converters for notebook processor power and control MOSFET for isolated DC-DC converters in networking systems. The device is optimized for both conduction and switching losses.
Supplied in a standard SO-8 surface mount package, lead-free and halogen-free. Operating temperature range is -55°C to 150°C.
30V maximum.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction temperature).
According to existing data, it is RoHS3 compliant, but this is unverified. The datasheet confirms lead-free and halogen-free.
14A at 25°C ambient, 11A at 70°C.
Typical 1.80V, maximum 2.35V, minimum 1.35V.
8.1nC at Vgs=10V.