| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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92 pcs
|
92 pcs | On Request | 1 | On Request | On Request | 1427 | On Request | On Request | |
|
29 pcs
|
29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF8707TRPBF is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the HEXFET series. It is designed for high-efficiency DC-DC converter applications, particularly as a control MOSFET in synchronous buck converters for notebook and networking systems.
Key electrical specifications include a drain-source voltage rating of 30V, continuous drain current of 11A at 25°C (9.1A at 70°C), and a maximum on-resistance of 11.9mOhm at VGS=10V. The device features low gate charge (typical 6.2nC) and low input capacitance (760pF), enabling fast switching and reduced losses.
The MOSFET is housed in a standard 8-SOIC surface mount package with a junction-to-ambient thermal resistance of 50°C/W. It is rated for operation from -55°C to 150°C junction temperature. The part is lead-free and listed as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant (unverified).
6.2 nC at VDS=15V, VGS=4.5V.
11A at 25°C, 9.1A at 70°C.