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IRF8707PBF N-Channel MOSFET, 30V drain-source breakdown voltage, 11A continuous drain current, low on-resistance of 11.9mOhm at 10V gate drive. Surface mount in SO-8 package.
Mfr Part #:

IRF8707PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET, 30V drain-source breakdown voltage, 11A continuous drain current, low on-resistance of 11.9mOhm at 10V gate drive. Surface mount in SO-8 package.
✓ Total Stock: 2,598 pcs

IRF8707PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
2,568 pcs
On Request
2568 pcs On Request 1 On Request On Request On Request On Request On Request
Fe Components ✓
Non-Authorised Inventory information
30 pcs
On Request
30 pcs On Request 30 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF8707PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF8707PBF Description

Short technical summary and product information.

The IRF8707PBF is an N-Channel Power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 30V and a continuous drain current of 11A at 25°C ambient. The device offers low on-resistance of 11.9mOhm maximum at Vgs=10V and Id=11A, with a typical value of 9.3mOhm. Gate charge is 6.2nC typical at 4.5V, enabling efficient switching. The MOSFET is optimized for use as a control MOSFET in synchronous buck converters for notebook and networking applications. It is housed in a standard SO-8 surface mount package with gull wing leads. The device is lead-free and RoHS compliant (unverified). Operating junction temperature range is -55°C to 150°C. Key electrical characteristics include input capacitance of 760pF at 15V and forward transconductance of 25S. The device is suitable for high-efficiency DC-DC converters.

IRF8707PBF Quick Information

Product Type: MOSFET
Canonical Name: IRF8707PBF N-Channel MOSFET
Subcategory: Power MOSFET

IRF8707PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRF8707PBF Features

  • 30V drain-source breakdown voltage.
  • 11A continuous drain current at 25°C.
  • Low on-resistance of 11.9mOhm at 10V.
  • Low gate charge of 6.2nC typical.
  • Surface mount SO-8 package.

IRF8707PBF Applications

  • Control MOSFET in synchronous buck converters.
  • Used in notebook processor power supplies.
  • Ideal for isolated DC-DC converters in networking systems.

IRF8707PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

30V

What is the continuous drain current?

11A at 25°C ambient, 9.1A at 70°C ambient

What is the on-resistance?

11.9mOhm maximum at Vgs=10V, Id=11A; 17.5mOhm maximum at Vgs=4.5V, Id=8.8A

What is the package type?

SO-8 surface mount package (8-SOIC)

What is the operating temperature range?

-55°C to 150°C junction temperature

Is the device RoHS compliant?

RoHS3 Compliant (unverified, datasheet confirms lead-free)

What is the gate threshold voltage?

1.35V minimum, 1.80V typical, 2.35V maximum at Id=25µA

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