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IRF8513PBF The IRF8513PBF is a dual N-channel power MOSFET from Infineon, rated at 30V with continuous drain currents of 8A (Q1) and 11A (Q2). It features low on-resistance and is optimized for synchronous buck converters.
Mfr Part #:

IRF8513PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRF8513PBF is a dual N-channel power MOSFET from Infineon, rated at 30V with continuous drain currents of 8A (Q1) and 11A (Q2). It features low on-resistance and is optimized for synchronous buck converters.
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IRF8513PBF Available from 1 distributor

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IRF8513PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Continuous Drain Current (Maximum @ VGS=10 V, TC=25 °C)
Continuous Drain Current (Maximum @ Vgs = -10 V, Tc = +70 °C)
Current
Drain to Source Voltage (Vdss)
Drain-to-Source On-Resistance (Typical/Maximum @ VGS = 10 V, ID = 11 A)
Drain-to-Source On-Resistance (Typical/Maximum @ Vgs=4.5 V, Id=8.6 A)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Gate-to-Source Voltage (Vgs) Max
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Tc=70 °C)
Pulsed Drain Current (Maximum)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Thermal Resistance Junction-to-Drain Lead
Thermal Resistance, Junction-to-Ambient (Maximum)
Vgs(th) (Max) @ Id

IRF8513PBF Description

Short technical summary and product information.

The IRF8513PBF is a dual N-channel power MOSFET from Infineon Technologies, part of the HEXFET family. It integrates two MOSFETs in an industry-standard SO-8 package, with a drain-to-source voltage rating of 30V. The two channels offer continuous drain currents of 8A (Q1) and 11A (Q2) at 25°C, with low on-resistance values of 15.5mΩ (Q1) and 12.7mΩ (Q2) maximum at 10V gate drive.

 

This device is optimized for parameters critical in synchronous buck converters, including low gate charge (8.6nC max at 4.5V) and low Rds(on) to reduce both conduction and switching losses. The logic-level gate threshold (1.35V min, 2.35V max) allows operation with low-voltage gate drives. It is fully characterized for avalanche voltage and current, and features a maximum gate-to-source voltage rating of ±20V.

 

The IRF8513PBF is surface-mount in an 8-SOIC package (8-SO supplier device package), suitable for high-efficiency DC-DC converters in notebook computers, servers, graphics cards, game consoles, and set-top boxes. It is RoHS compliant and halogen-free, with a lead-free finish qualified to 260°C reflow.

IRF8513PBF Quick Information

Product Type: MOSFET Array
Canonical Name: IRF8513PBF Dual N-Channel Power MOSFET
Subcategory: MOSFET Arrays

IRF8513PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF8513PBF Features

  • Dual N-channel MOSFET in SO-8 package.
  • 30V drain-to-source voltage rating.
  • Low on-resistance for high efficiency.
  • Logic-level gate drive capability.
  • RoHS compliant and halogen-free.

IRF8513PBF Applications

  • Ideal for synchronous buck converters.
  • Used in notebook and server power.
  • Suitable for graphics card power stages.
  • Works in game console power supplies.
  • Applicable to set-top box designs.

IRF8513PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IRF8513PBF?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the package type of the IRF8513PBF?

The IRF8513PBF is available in an 8-SOIC package (0.154", 3.90mm Width) with surface mount mounting.

What is the operating temperature range of the IRF8513PBF?

The operating junction temperature range is -55°C to 175°C.

Is the IRF8513PBF RoHS compliant?

Yes, the IRF8513PBF is RoHS compliant and halogen-free.

What are the continuous drain current ratings for each channel?

At 25°C, Q1 is rated for 8A and Q2 for 11A continuous drain current at Vgs=10V.

What is the on-resistance of the IRF8513PBF?

At Vgs=10V, Q1 has a maximum on-resistance of 15.5mΩ and Q2 has a maximum of 12.7mΩ.

What is the gate charge of the IRF8513PBF?

The maximum gate charge (Qg) is 8.6nC at Vgs=4.5V.

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