| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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938 pcs
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938 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF843 from Samsung Electronics is an N-Channel enhancement mode silicon gate power MOSFET. Designed for high-speed switching applications, it is suitable for use in switching regulators, converters, and motor drivers.
Key electrical characteristics include a maximum Drain-Source Voltage of 450V and a Continuous Drain Current of 7A at 25°C, reducing to 4.4A at 100°C. The device features a typical On-Resistance of 0.85Ω and a maximum power dissipation of 125W. It is rated for a single pulse avalanche energy of 510mJ.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a standard TO-220AB through-hole configuration, designed for easy mounting on printed circuit boards. The device is sensitive to electrostatic discharge and requires proper handling procedures.
Applications include relay drivers, drivers for high power bipolar switching transistors, and direct operation from integrated circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the IRF843 is 450V.
The continuous drain current of the IRF843 at 25°C is 7A.
The typical On-Resistance of the IRF843 is 0.85Ω.
The operating temperature range for the IRF843 is -55°C to 150°C.
The IRF843 is supplied in a TO-220AB package.