IRF840STRRPBF N-Channel MOSFET, 500V drain-source voltage, 8A continuous drain current, 0.85Ω on-resistance, in D2PAK surface mount package.
Mfr Part #:

IRF840STRRPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Channel MOSFET, 500V drain-source voltage, 8A continuous drain current, 0.85Ω on-resistance, in D2PAK surface mount package.
✓ Total Stock: 1,000 pcs
$ Price Range: $1.20 - $3.79

IRF840STRRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF840STRRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF840STRRPBF Description

Short technical summary and product information.

The IRF840STRRPBF is a N-Channel Power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 500V and a continuous drain current of 8A at 25°C case temperature. The device has a maximum on-resistance of 0.85Ω at Vgs=10V and Id=4.8A, ensuring low conduction losses. With a total gate charge of 63nC, it offers fast switching performance suitable for power conversion circuits.

 

This MOSFET is housed in a D2PAK (TO-263) surface-mount package, which provides excellent power dissipation up to 125W at 25°C case temperature. It is rated for repetitive avalanche energy and has a peak diode recovery dV/dt of 3.5 V/ns, enhancing ruggedness in inductive load switching. The operating junction temperature range is -55°C to 150°C, allowing use in harsh environments.

 

Typical applications include switch-mode power supplies, uninterruptible power supplies, and motor control circuits. The part is available in tape and reel packaging for automated assembly. Compliance with RoHS3 is stated, though verification is pending.

IRF840STRRPBF Quick Information

Product Type: MOSFET
Series: IRF840S
Canonical Name: IRF840STRRPBF MOSFET N-Channel 500V 8A D2PAK
Subcategory: N-Channel MOSFET

IRF840STRRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRF840STRRPBF Estimated Pricing

Qty Low High
1+ $3.79 $3.79
10+ $2.48 $2.48
50+ $1.91 $1.91
100+ $1.73 $1.73
800+ $1.34 $1.34
2,400+ $1.20 $1.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF840STRRPBF Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • 8A continuous drain current at 25°C case temperature.
  • 0.85Ω maximum on-resistance at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package.
  • Avalanche rated with 510mJ single pulse energy.

IRF840STRRPBF Applications

  • High-voltage switch-mode power supplies.
  • Uninterruptible power supply (UPS) circuits.
  • Motor control and inverter applications.
  • DC-DC converters and power factor correction.

IRF840STRRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF840STRRPBF?

The drain-source voltage (Vdss) is 500V.

What is the maximum continuous drain current?

8.0A at 25°C case temperature, derated to 5.1A at 100°C.

What is the on-resistance of this MOSFET?

Maximum 0.85Ω at Vgs=10V and Id=4.8A.

What package is the IRF840STRRPBF available in?

Surface-mount D2PAK (TO-263-3, D²Pak, TO-263AB).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the IRF840STRRPBF RoHS compliant?

RoHS3 compliant status is claimed but unverified.

What is the total gate charge?

Maximum 63nC at Vgs=10V.

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