| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF840SPBF is an N-Channel Power MOSFET from Vishay Dale, designed for high-voltage switching applications. It features a maximum drain-source voltage of 500V and a continuous drain current of 8A at 25°C case temperature. The device offers a low maximum on-resistance of 850mΩ at a gate-source voltage of 10V and a drain current of 4.8A.
This MOSFET utilizes third-generation power MOSFET technology, providing fast switching and ruggedized device design. It is rated for repetitive avalanche and has a dynamic dV/dt rating. The total gate charge is 63nC maximum at 10V, with gate-source charge of 9.3nC and gate-drain charge of 32nC typical.
The IRF840SPBF is housed in a D2PAK (TO-263) surface-mount package, which offers low internal connection resistance and can dissipate up to 125W at 25°C case temperature. It is suitable for high-current applications and is available in tape and reel packaging. The device operates over a junction temperature range of -55°C to 150°C.
500V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (D2PAK).
-55°C to 150°C.
RoHS3 Compliant and lead-free.
8A.
850mΩ maximum at VGS=10V, ID=4.8A.
63nC maximum at VGS=10V.