| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF840S is an N-Channel power MOSFET from Vishay Dale designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 8A at 25°C case temperature. The device has a maximum on-resistance (Rds(on)) of 850mOhm at 4.8A and 10V gate drive.
This MOSFET uses third-generation power MOSFET technology providing fast switching and rugged device design. The total gate charge (Qg) is 63nC at 10V and input capacitance (Ciss) is 1300pF at 25V drain-source voltage. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current.
The device is housed in a D2PAK (TO-263) surface-mount package which offers high power dissipation capability up to 125W at case temperature. The operating junction temperature range is -55°C to 150°C. The part is RoHS3 compliant and has MSL 1 unlimited moisture sensitivity level.
The drain-source voltage (Vdss) is 500V.
The continuous drain current (Id) is 8A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 850mOhm at 4.8A drain current and 10V gate-source voltage.
The IRF840S is available in a D2PAK (TO-263) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the IRF840S is RoHS3 compliant.