IRF840LCL IRF840LCL is a 500V, 8A N-Channel Power MOSFET from Vishay Siliconix. It features a low 850mΩ maximum on-resistance and an I2PAK through-hole package.
Mfr Part #:

IRF840LCL

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRF840LCL is a 500V, 8A N-Channel Power MOSFET from Vishay Siliconix. It features a low 850mΩ maximum on-resistance and an I2PAK through-hole package.
✓ Total Stock: 10,000 pcs
$ Price Range: $3.15

IRF840LCL Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request

IRF840LCL Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF840LCL Description

Short technical summary and product information.

The IRF840LCL is an N-channel power MOSFET from Vishay Siliconix. It is designed for high-frequency switching applications and features a low gate charge to reduce drive requirements. The device is rated for a drain-source voltage of 500V and a continuous drain current of 8A at a case temperature of 25°C.

 

The maximum on-resistance is 850mΩ at a gate-source voltage of 10V and a drain current of 4.8A. Maximum gate charge is 39nC at 10V, with typical Qgs of 10nC and Qgd of 19nC. Input capacitance is 1100pF at Vds=25V. The MOSFET can handle pulsed drain currents up to 28A and has a single-pulse avalanche energy rating of 510mJ.

 

Power dissipation is rated up to 125W at a case temperature of 25°C, with a linear derating factor of 1.0W/°C. The operating junction temperature range is -55°C to 150°C.

 

The device is supplied in a TO-262-3 long-lead I2PAK (TO-262AA) package with through-hole mounting, making it suitable for power-switching circuits, switch-mode power supplies, and converters.

IRF840LCL Quick Information

Product Type: Power MOSFET
Series: IRF840L
Canonical Name: N-Channel Power MOSFET
Subcategory: Single N-Channel MOSFET

IRF840LCL Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

IRF840LCL Estimated Pricing

Qty Low High
1,000+ $3.15 $3.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF840LCL Features

  • N-channel 500V drain-source voltage MOSFET.
  • 8A continuous drain current at 25°C.
  • 850mΩ maximum on-resistance at 10V drive.
  • Ultra low gate charge of 39nC max.
  • Available in TO-262 I2PAK package.

IRF840LCL Applications

  • Ideal for high-frequency power switching applications.
  • Suitable for switch-mode power supply designs.
  • Used in power conversion and inverter circuits.

IRF840LCL FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF840LCL?

The maximum drain-source voltage is 500V.

What is the continuous drain current rating of the IRF840LCL?

The continuous drain current is 8A at a case temperature of 25°C and 5.1A at 100°C.

What is the maximum on-resistance of the IRF840LCL?

The maximum on-resistance is 850mΩ at VGS=10V and ID=4.8A.

What is the gate charge of the IRF840LCL?

The maximum gate charge is 39nC at VGS=10V, with typical Qgs of 10nC and Qgd of 19nC.

What package is the IRF840LCL available in?

The IRF840LCL is available in a TO-262-3 Long Leads I2PAK (TO-262AA) package with through-hole mounting.

What is the operating junction temperature range of the IRF840LCL?

The operating junction temperature range is -55°C to 150°C.

Is the IRF840LCL RoHS compliant?

Existing database records list it as RoHS3 compliant, but this compliance is not independently verified.

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