| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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339 pcs
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339 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics IRF840FI is an N-Channel Power MOSFET housed in a TO-220AB package. It features a maximum drain-source voltage (Vds) of 500V and a low on-resistance (Rds(on)) of 0.85 Ohms at a gate-source voltage (Vgs) of 10V. The device has a continuous drain current (Id) of 4.5A when Vgs is 10V. Its typical gate charge (Qg) is 35nC.
This power MOSFET is suitable for applications requiring efficient switching and power handling. The TO-220AB package is designed for through-hole mounting, facilitating integration into circuit boards. Its electrical characteristics make it a reliable component for power management circuits and other electronic designs.
Key specifications include a 500V breakdown voltage and a low static resistance, contributing to reduced power loss during operation. The typical gate charge indicates the drive requirements for the MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRF840FI is 500V.
The IRF840FI has a maximum on-resistance (Rds(on)) of 0.85 Ohms at Vgs=10V.
The continuous drain current (Id) for the IRF840FI is 4.5A at Vgs=10V.
The typical gate charge (Qg) for the IRF840FI is 35nC.
The IRF840FI is available in a TO-220AB package.