IRF840BPBF IRF840BPBF is an N-Channel MOSFET from Vishay with 500V drain-source breakdown voltage, 8.7A continuous drain current, and 850mOhm on-resistance in a TO-220AB package.
Mfr Part #:

IRF840BPBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
IRF840BPBF is an N-Channel MOSFET from Vishay with 500V drain-source breakdown voltage, 8.7A continuous drain current, and 850mOhm on-resistance in a TO-220AB package.
✓ Total Stock: 50,497 pcs
$ Price Range: $1.08 - $2.24

IRF840BPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
45,000 pcs
45000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5,497 pcs
5497 pcs On Request 1 On Request On Request 12 On Request On Request

IRF840BPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRF840BPBF Description

Short technical summary and product information.

The IRF840BPBF is an N-Channel power MOSFET from Vishay's D Series. It is designed for efficient power conversion with low input capacitance and reduced capacitive switching losses. The device is rated for a drain-source breakdown voltage of 500V and a continuous drain current of 8.7A at 25°C case temperature.

 

The MOSFET features a maximum on-resistance of 850mOhm at 4A and 10V gate drive, and a maximum gate charge of 30nC at 10V. It is capable of handling pulsed drain currents up to 18A and has a maximum power dissipation of 156W. The device can operate over a junction temperature range of -55°C to 150°C.

 

The IRF840BPBF comes in a through-hole TO-220-3 package with a TO-220AB supplier device package. It is suitable for applications such as switched-mode power supplies, display backlighting, induction heating, motor drives, and battery chargers.

IRF840BPBF Quick Information

Product Type: Power MOSFET
Series: D Series
Canonical Name: IRF840BPBF N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

IRF840BPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF840BPBF Estimated Pricing

Qty Low High
1+ $2.24 $2.24
50+ $1.08 $1.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF840BPBF Features

  • Avalanche energy rated for 56 mJ.
  • Low input capacitance for reduced switching losses.
  • 850mOhm maximum on-resistance at 10V gate drive.
  • Operating temperature range -55°C to 150°C.
  • Through-hole TO-220-3 package for easy mounting.

IRF840BPBF Applications

  • Used in switched-mode power supplies.
  • Suitable for induction heating systems.
  • Ideal for motor drive circuits.
  • Used in battery charger designs.
  • Applied in server and telecom power supplies.

IRF840BPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IRF840BPBF?

500 V.

What is the continuous drain current rating?

8.7 A at Tc=25°C, derated to 5.5 A at Tc=100°C.

What is the package type?

TO-220-3 (through-hole), supplier device package TO-220AB.

What is the operating temperature range?

-55°C to 150°C (junction).

Does the IRF840BPBF have RoHS compliance?

The RoHS status is listed as RoHS3 Compliant but is unverified.

What is the maximum gate-source voltage?

±30 V.

What is the maximum on-resistance?

850 mOhm at Id=4A, Vgs=10V.

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