| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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47 pcs
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47 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF840B is an N-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's planar DMOS technology. It is designed for high efficiency switch mode power supplies, power factor correction circuits, and electronic lamp ballasts based on half-bridge topologies.
Key electrical specifications include a drain-source breakdown voltage of 500V, continuous drain current of 8A at 25°C case temperature, and a maximum drain-source on-resistance of 800mΩ at VGS = 10V. The device offers low gate charge (typical 41 nC) and low reverse transfer capacitance (typical 35 pF) for improved switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 320 mJ.
The IRF840B is supplied in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 0.93°C/W. The operating junction temperature range is -55°C to +150°C.
The maximum drain-source voltage (VDSS) is 500V.
The continuous drain current is 8A at TC = 25°C and 5.1A at TC = 100°C.
The maximum drain-source on-resistance is 800mΩ at VGS = 10V and ID = 4A.
The IRF840B is available in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to +150°C.
The RoHS status is listed as compliant but is unverified. Verify with the manufacturer.