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IRF840ASPBF IRF840ASPBF is an N-Channel Power MOSFET from Vishay Siliconix, rated for 500V drain-source voltage and 8A continuous drain current. It features a low on-resistance of 0.85Ω and is housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

IRF840ASPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRF840ASPBF is an N-Channel Power MOSFET from Vishay Siliconix, rated for 500V drain-source voltage and 8A continuous drain current. It features a low on-resistance of 0.85Ω and is housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 4,220 pcs
$ Price Range: $1.66 - $4.38

IRF840ASPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,220 pcs
On Request
4220 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF840ASPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRF840ASPBF Description

Short technical summary and product information.

The IRF840ASPBF is an N-Channel enhancement-mode Power MOSFET manufactured by Vishay Siliconix. It is designed for high-speed power switching applications such as switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

 

Key electrical specifications include a drain-source voltage (Vds) of 500V, continuous drain current (Id) of 8A at 25°C (5.1A at 100°C), and a maximum on-resistance (Rds(on)) of 0.85Ω at Vgs = 10V. The device features a low gate charge (Qg max 38nC) for simplified drive requirements and fully characterized capacitance and avalanche ruggedness.

 

The MOSFET is offered in a D2PAK (TO-263) surface-mount package, which is suitable for automated assembly. The operating junction temperature range is -55°C to +150°C, and the maximum power dissipation is 125W at case temperature 25°C.

IRF840ASPBF Quick Information

Product Type: Power MOSFET
Series: IRF840
Canonical Name: IRF840ASPBF N-Channel Power MOSFET, 500V, 8A, D2PAK (TO-263)
Subcategory: N-Channel MOSFET

IRF840ASPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Non-Compliant
Lead Free: Yes

IRF840ASPBF Estimated Pricing

Qty Low High
1+ $4.38 $4.38
10+ $2.88 $2.88
50+ $2.24 $2.24
100+ $2.03 $2.03
500+ $1.66 $1.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF840ASPBF Features

  • N-Channel MOSFET rated for 500V drain-source voltage.
  • Continuous drain current of 8A at 25°C.
  • Low on-resistance of 0.85Ω at Vgs = 10V.
  • Low gate charge of 38nC for simplified drive.
  • Surface-mount D2PAK (TO-263) package.

IRF840ASPBF Applications

  • Switch mode power supply (SMPS) designs.
  • Uninterruptible power supply (UPS) circuits.
  • High-speed power switching applications.
  • Half-bridge and full-bridge converter topologies.

IRF840ASPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF840ASPBF?

The drain-source voltage (Vds) is rated at 500V.

What is the continuous drain current rating at 25°C?

The continuous drain current (Id) is 8.0A at Tc = 25°C.

What is the maximum on-resistance?

The maximum on-resistance (Rds(on)) is 0.85Ω at Vgs = 10V and Id = 4.8A.

What package is the IRF840ASPBF available in?

It is available in a D2PAK (TO-263) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What is the gate charge of this MOSFET?

The maximum total gate charge (Qg) is 38nC at Vgs = 10V.

What is the single pulse avalanche energy rating?

The single pulse avalanche energy (Eas) is 510mJ at starting TJ = 25°C.

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